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Entry  Thu Mar 20 18:09:33 2014, tara, Notes, NoiseBudget, extracting phiL phiH Hong_coat_BR.zip
    Reply  Thu Mar 20 21:54:10 2014, Evan, Notes, NoiseBudget, extracting phiL phiH 
    Reply  Sat Mar 22 19:17:31 2014, tara, Notes, NoiseBudget, extracting phiL phiH hong_hist.pnghong_hist.fig
       Reply  Sun Mar 23 17:32:42 2014, tara, Notes, NoiseBudget, extracting phiL phiH phi_young_ta2o5.pngBR_Y_ta2o5.pngBR_Y_ta2o5.figphi_young_ta2o5.fig
          Reply  Mon Mar 24 20:56:35 2014, tara, Notes, NoiseBudget, extracting phiL phiH 
             Reply  Tue Mar 25 14:37:54 2014, tara, Notes, NoiseBudget, extracting phiL phiH phi_Y.JPG
                Reply  Wed Mar 26 21:53:50 2014, tara, Notes, NoiseBudget, extracting phiL phiH Penn2003_tab2.pngPSL1416_fig1.pngPSL1416_fig1.figphi_result.m.zip
                   Reply  Sat Mar 29 23:32:50 2014, tara, Notes, NoiseBudget, extracting phiL phiH PennLVCmarch2010.png
          Reply  Tue Mar 25 20:47:19 2014, Evan, Notes, NoiseBudget, extracting phiL phiH eratiosweep.pdf
Message ID: 1413     Entry time: Mon Mar 24 20:56:35 2014     In reply to: 1412     Reply to this: 1414
Author: tara 
Type: Notes 
Category: NoiseBudget 
Subject: extracting phiL phiH 

 Ta2O5 Young's modulus is quoted to be 140 GPa from this paper Martin1993,  but that is the value of Ta2O5 deposited on Silicon substrate cf fig5, top plot. The deposition technique is IAD. I'm not sure if it is the same as ion beam sputtering or not. I'm looking into it.

Anyway, the Young's modlus of Ta2O5 can be down to 70 GPa for IAD technique on glass substrate, as the paper says in the conclusion section. 

 Note that Crooks2006 mentions other papers measure YTa2O5 to be around 100-110 GPa as well. I'm looking into it.

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