just a few infos on Silicon PDs I looked up.
If you want to go beyond the 100MHz achievable with the device I worked on,
the one thing to improve is the opamp, where Steve is trying to find OPA657.
This is a FET with 1.6GHz BWP, minimum stable gain of 7, and 4.8nV/rt(Hz) noise.
Should be ok with 750-1000 Ohm transimpedance.
The other thing you might want to change is the PD
(although it might be the 1cm PD with high bias is as fast as smaller ones with lower bias).
There are two types of other Si diodes at the 40m right now (~3mm):
-Rana and I found a Centronic OSD 15-5T in the old equipment
-Frank gave me a Hamamatsu S1223-01 on a Thorlabs pre-amp device (could be taken out).
The Centronic OSD 15-5T has up to 80pF with 12 V bias according to the datasheet.
The Hamamatsu S1223-01 is stated with 20pF only, but stated to have a max. frequency resp. of 20MHz ('-3db point').
I dont know what this means, as the corner freq. of 10pF into 50Ohm is still 160MHz.
In any case there are faster 3mm types to start with, as for example Hamamatsu S3399 (~ 90$),
which is stated to have the corner at 100MHz with 50 Ohm load.
For this type the stated capacity (20pF) looks consistent with ~100MHz corner into 50 Ohm.
So probably you can get higher BW with this one using much smaller load, as in transimpedance stage.