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Message ID: 1297     Entry time: Thu Feb 12 14:39:07 2009
Author: rana 
Type: Summary 
Category: General 
Subject: Silicon Beam Dump test 
Yesterday evening, Ken Mailand and I tested the reflectivity of a piece of polished Silicon. Since Silicon has such a high thermalconductivity (compared to stainless and fused silica) and can take much more heat than black glass and should have a very good BRDF and should absorb most of the 1064 nm light if we hit it at Brewster's angle, we want to try it out in the first version high power, low scatterbeam dump. This dump will be a 'V' style dump like what Steve has tested nearly a year ago, but the incoming beam will first hit this piece of Silicon.

The pictures of the setup and the Silicon with the beam hitting it are here.

Brewster's angle for p-pol at 1064 nm is 74.2 deg (n = 3.53 @ 1064 nm). We set up a cube polarizer on the output of the ~1064 nm CrystaLaser. 144 mW got to the Si; the reflected beam was ~1.9-2.0 mW after tuning the angle for minimum power. Via eyeball and protractor it seems that we're at ~74 deg. So the reflectivity is < 1.5-2%. This is good enough; the reflected power will be < 1 W in all cases for eLIGO and that can be absorbed by the rest of the stainless V dump. The 35 W of heat in the silicon will be mostly gotten rid of through conduction into the attached heat sink fins.

This kind of dump would go into places like the PMC-REFL, MC-REFL, & IFO-REFL, where we occasionally need to take high power, but also are sensitive to backscatter.
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