1. In terms of the AOM:
How much beam power is incident on the AOM? How much is the deflection efficiency?
i.e. How much is the power lost by the crystal, deflected in the 1st order, and remaining in the oth order?
I am curious because I assume the AOM (which vender?) is designed for 1064nm and the setup uses 632nm.
2. In terms of the EOM:
How much sidebands do you expect to have?
I assume the EOM is designed for 1064nm, the only difference is the coating at the end. Is this right?
How much beating strength do you expect?
Is your beating level as expected?
How much is the contrast between the PM sideband and the frequency shifted carrier?
This must include the consideration on the presence of the carrier and the other sidebands.
We've set up a preliminary test bed for the phase camera. It simply uses a HeNe that is split into two beams. One is frequency shifted by an AOM by -40 MHz - df, where df is some acoustic frequency. The second beam is transmitted through a 40MHz EOM to get sidebands. The two beams are recombined and are, currently, incident on a photodetector, but this can be replaced by the phasecamera.
We turned everything on with df = 1kHz and confirmed that a 1kHz signal is visible on the output from the photodetector (PD). The signal looks to be about 1:300 of the DC level from the PD.