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Message ID: 1888     Entry time: Tue Aug 11 23:55:04 2009
Author: rana, rich 
Type: Summary 
Category: OMC 
Subject: Quantum Efficiency and Dark Current measurements of eLIGO Photodiodes 

Rich Abbott, Rana

Summary: We found that the 3mm InGaAs photodiodes from eGTRAN which are being used for the DC Readout in eLIGO are bad. The QE is ~50%. We will have to replace them ASAP.

Valera and Nic Smith have pointed out out a factor of ~2 discrepancy between the estimated power transmission to the dark port in H1 and L1. So we decided to measure the QE of the accused diodes.

 The data of the QE and dark current are attached here.

We used a 1064 nm CrystaLaser (which does not have a very stable power output). We attenuated the light with an ND1.0 for all measurements.

The photocurrent is estimated by reading out the voltage across one leg of the differential drive of the DC PD preamp. The photocurrent goes across a 100 Ohm resistor and then through 2 gain of  1 stages to get to this testpoint, so the overall transimpedance gain is 100 Ohms for this measurement.

By far, the Ophir power meter is the biggest source of error. Its absolute calibration is only 5% and the variation across the sensor face is ~5%. There are some hot and not hot spots on the face which can make even more variation, but we tried to avoid these.

We also inserted the power meter very close to the time when we read the voltage, so that the photocurrent and power estimates are made within 10 seconds of each other. This should reduce the error from the laser's power fluctuations.

All diodes still had the glass case on. We measured the reflected power to be ~5-7% of the incident power. This reflected power is NOT accounted for in these estimates.

 

Punch line: The eGTRAN diodes that we currently use are definitely bad. The JDSU and EG&G 2mm diodes have a better QE. We should immediately purchase 3 mm versions and get them cut and measured to be ready for the Sep. 1 commissioning surge.

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